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| Sensitive Gate Silicon Controlled Rectifiers e w ta a Repetitive Peak Off-State Voltage : 400V D On-State Current (IT(RMS)=0.8 A) . w R.M.S w Low On-State Voltage (1.2V(Typ.)@ITM) Features General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. he S 4U t om .c BT100-6 Absolute Maximum Ratings (TJ=25 unless otherwise specified) Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG Parameter Repetitive Peak Off-state Voltage Average On-State Current R.M.S On-State Current Surge On-State Current It for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature w w w t a .D S a e h U t4 e .c m o Condition Ratings 400 0.5 0.8 10 0.415 2 0.1 1 5.0 Units V A A A A S W Half Sine Wave : TC =74 All Conduction Angle 1/2 Cycle, 60Hz, Sine Wave NonRepetitive t = 8.3ms w w w .D -40 at -40 ~ Sh125 a ~ 150 et e om .c A 4U W V 1 BT100-6 Electrical Characteristics Ratings Symbol Items VAK=VDRM, Conditions Min Typ 1.2 Max 10 200 1.7 200 500 or VRRM:RGK=1000 Tc=25 Tc=125 Unit IDRM Repetitive Peak OffState Current Peak On-State Voltage(1) Gate Trigger Current(2) VTM (ITM=1A, Peak) VAK=6V, RL=100 Tc=25 Tc=-40 VD=7V, RL=100 Tc=25 Tc=-40 VAK=12V, RL=100 Tc=125 V IGT VGT Gate Trigger Voltage(2) Non-Trigger Gate Voltage(1) 0.2 0.8 1.2 V VGD V dv/dt Critical Rate of Rise Off-State Voltage Critical Rate of Rise Off-State Voltage VD=Rated VDRM, Exponential waveform RGK=1000 TJ=125 500 800 V/ di/dt IPK=20A ; lgt=20mA PW=10;diG/dt=1A/ 50 A/ IH Rth(j-c) Rth(j-a) Holding Current Thermal Thermal Impedance Impedance VAK=12V, Gate Open Initiating Current=20mA Tc=25 Tc=-40 Junction to case Junction to Ambient 2 5.0 10 60 150 mA /W /W Notes : 1. Pulse Width 1.0ms, Duty cycle 1% 2. Does not include RGK in measurement. 2 BT100-6 3 BT100-6 4 BT100-6 * TO-92 5 |
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